Samsung, the world’s largest seller of NAND flash-based storage, said
Dec. 21 that it has been sampling 100GB, 200GB and 400GB
multi-level-cell (MLC) solid state drives for use as primary storage in
enterprise storage systems.
Virtually all primary storage in enterprise systems currently is
contained in DRAM cache or hard disk drives, so this marks a milestone
of sorts for the SSD and NAND flash industries.
Samsung claimed that the new drives can process random read commands at
about 43,000 input/outputs per second (IOPS) and provide random writes
at 11,000 IOPS.
These speeds, as expected in most SSDs, blow conventional hard drives
out of the water. Standard 15K RPM HDDs provide a rate of about 350
IOPS; thus the new SSDs — at least in benchmark research –offer a 120X
gain in random IOPS read performance and a 30X gain in random IOPS
write performance.
For more, read the eWeek article: Samsung Testing Multi-Level-Cell SSDs for Primary Enterprise Storage.
